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Application and development of FRAM in the medical field and smart meters

  • Categories:Industry News
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  • Time of issue:2019-12-27 14:26
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(Summary description)ProductpositioningandadvantagesofFRAMFRAM(FerroelectricRandomAccessMemory)isanon-volatileferroelectricmemorythatusesaferroelectricfilmtoholddata.Thismemoryhasnon-volatileandrandomaccesscharacteristics.Non-volatilemeansthatthedatastoredinthememorycanbesavedevenifthechip'spoweristurnedoff. Inthepastfewyears,avarietyofnewtypesofmemoryhavefloodedthemarket,suchasMRAM(MagnetoresistiveRandomAccessMemory),whichusesmagneticmaterialsasthestorageunit;PRAM(PhaseChangeRandomAccessMemory)storageunitUsingthermal-sensitivematerials;ReRAM(ResistanceRandomAccessMemory)usesmemorymaterialswhoseresistancevaluechangeswithappliedvoltagetomakememorycells.Butfromthehistoricalrecordofproductionandsupply,FRAMiscompletelyoutofstepwiththem.MassproductionofFRAMbeganin1999,andhasshippedmorethan2billionunitstodate.FRAMisveryreliableandwidelyusedinindustrialapplications,meters,POSmachines,ticketmachines,factoryautomationequipment,measuringequipment,smartcards,bankterminalsandotherfields.

Application and development of FRAM in the medical field and smart meters

(Summary description)ProductpositioningandadvantagesofFRAMFRAM(FerroelectricRandomAccessMemory)isanon-volatileferroelectricmemorythatusesaferroelectricfilmtoholddata.Thismemoryhasnon-volatileandrandomaccesscharacteristics.Non-volatilemeansthatthedatastoredinthememorycanbesavedevenifthechip'spoweristurnedoff. Inthepastfewyears,avarietyofnewtypesofmemoryhavefloodedthemarket,suchasMRAM(MagnetoresistiveRandomAccessMemory),whichusesmagneticmaterialsasthestorageunit;PRAM(PhaseChangeRandomAccessMemory)storageunitUsingthermal-sensitivematerials;ReRAM(ResistanceRandomAccessMemory)usesmemorymaterialswhoseresistancevaluechangeswithappliedvoltagetomakememorycells.Butfromthehistoricalrecordofproductionandsupply,FRAMiscompletelyoutofstepwiththem.MassproductionofFRAMbeganin1999,andhasshippedmorethan2billionunitstodate.FRAMisveryreliableandwidelyusedinindustrialapplications,meters,POSmachines,ticketmachines,factoryautomationequipment,measuringequipment,smartcards,bankterminalsandotherfields.

  • Categories:Industry News
  • Author:
  • Origin:
  • Time of issue:2019-12-27 14:26
  • Views:
Information

Product positioning and advantages of FRAM

FRAM (Ferroelectric Random Access Memory) is a non-volatile ferroelectric memory that uses a ferroelectric film to hold data. This memory has non-volatile and random access characteristics. Non-volatile means that the data stored in the memory can be saved even if the chip's power is turned off.
 
In the past few years, a variety of new types of memory have flooded the market, such as MRAM (Magnetoresistive Random Access Memory), which uses magnetic materials as the storage unit; PRAM (Phase Change Random Access Memory) storage unit Using thermal-sensitive materials; ReRAM (Resistance Random Access Memory) uses memory materials whose resistance value changes with applied voltage to make memory cells. But from the historical record of production and supply, FRAM is completely out of step with them. Mass production of FRAM began in 1999, and has shipped more than 2 billion units to date. FRAM is very reliable and widely used in industrial applications, meters, POS machines, ticket machines, factory automation equipment, measuring equipment, smart cards, bank terminals and other fields.

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